TR TO-220

TYPE : Silicon N Channel IGBT High speed power switching Vces = 360V IC = 35A...

30F126 Transistor - 330V, IGBT, GT30F126, Toshiba original   30F126 - LCD Plasma common tube TO-220F Type Designator: GT30F126    Type: IGBT    Marking Code: 30F126    Type of IGBT Channel: N    Pcⓘ - Maximum Power Dissipation: 18 W  &...

SMK0765 to220f  original Type Designator: SMK0765  Type of Transistor: MOSFET Type of Control Channel: N -ChannelMaximum Power Dissipation: 40 W Maximum Drain-Source Voltage: 650 V Maximum Gate-Source Voltage: 30 V V Maximum Gate-Threshold Voltage: 4 V I- Maximum Drain Current:...

STK1820 SMK1820 LCD / Plasma TV triode TO220F original Type Designator: SMK1820F Type of Transistor: MOSFET Type of Control Channel: N -Channel     Maximum Power Dissipation: 35 W Maximum Drain-Source Voltage: 200 V  Maximum Gate-Source Voltage: 30 VM Maximum Gate-Threshold...

RFU20TM5S  TO-220,Super Fast Recovery Diode RFU20TM5S - 20 A, 530 V, SILICON, RECTIFIER DIODE, TO-220AC Super Fast Recovery Diode The RFU20TM5S from ROHM manufacturer is a Diodes, Rectifiers - Single with DIODE FAST REC 530V 20A TO220N-3. The RFU20TM5S is Diode Standard 530V 20A Through Hole ...

RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching Type Designator: RJK6025  Type of Transistor: MOSFET  Type of Control Channel: N -Channel  Maximum Power Dissipation: 25 W  Maximum Drain-Source Voltage: 600 V  Maximum Gate-Source Voltage: 30 V  Maximum D...

RJP30Y2A TO-220F LCD TV plasma original Part Number: RJP30Y2A, RJP30Y2ADPE Function: 360V, 35A, IGBT ( Silicon N Channel MOSFET ) Package: TO-220 Type...

  RJP6055  RJP6065DPP LCD TV Plasma MOS FET transistor RJP6055  TO220F original DescriptionThis is 630V, Silicon N-Channel IGBT. Features1. Low collector to emitter saturation voltage : VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C) 2. Gate to emitter volt...

RJP63G4 - Silicon N-Channel IGBT High Speed ​​Power Switching, 630V, 40A, TO-220FP Type Designator: RJP63G4  Type: IGBT  Type of IGBT Channel: N Maximum Power Dissipation: 160 W  Maximum Collector-Emitter Voltage: 600 V Maximum Collector Current: 40 A @25 Collector-Emitter satura...

MIP3E5MY MIP3E5M Integrated Circuit TO-220 original Part Number: MIP3E5MY Function: 700V, 1.1A, MOSFET Package: TO-220 Type Manufacturer: Panasonic ...

   Type Designator: FQP6N60   Type of Transistor: MOSFET   Type of Control Channel: N -Channel    Maximum Power Dissipation: 130 W    Maximum Drain-Source Voltage: 600 V  Maximum Gate-Source Voltage: 30 V  &nbs...

Type Designator: FQPF10N60C  Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation: 50 WMaximum Drain-Source Voltage: 600 V| Maximum Gate-Source Voltage: 30 VMaximum Gate-Threshold Voltage: 4 V| Maximum Drain Current: 9.5 A Maximum Junct...