TR TO-220

RFU20TM5S  TO-220,Super Fast Recovery Diode RFU20TM5S - 20 A, 530 V, SILICON, RECTIFIER DIODE, TO-220AC Super Fast Recovery Diode The RFU20TM5S from ROHM manufacturer is a Diodes, Rectifiers - Single with DIODE FAST REC 530V 20A TO220N-3. The RFU20TM5S is Diode Standard 530V 20A Through Hole ...

RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching Type Designator: RJK6025  Type of Transistor: MOSFET  Type of Control Channel: N -Channel  Maximum Power Dissipation: 25 W  Maximum Drain-Source Voltage: 600 V  Maximum Gate-Source Voltage: 30 V  Maximum D...

  RJP6055  RJP6065DPP LCD TV Plasma MOS FET transistor RJP6055  TO220F original DescriptionThis is 630V, Silicon N-Channel IGBT. Features1. Low collector to emitter saturation voltage : VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C) 2. Gate to emitter volt...

RJP63G4 - Silicon N-Channel IGBT High Speed ​​Power Switching, 630V, 40A, TO-220FP Type Designator: RJP63G4  Type: IGBT  Type of IGBT Channel: N Maximum Power Dissipation: 160 W  Maximum Collector-Emitter Voltage: 600 V Maximum Collector Current: 40 A @25 Collector-Emitter satura...

MIP3E5MY MIP3E5M Integrated Circuit TO-220 original Part Number: MIP3E5MY Function: 700V, 1.1A, MOSFET Package: TO-220 Type Manufacturer: Panasonic ...

   Type Designator: FQP6N60   Type of Transistor: MOSFET   Type of Control Channel: N -Channel    Maximum Power Dissipation: 130 W    Maximum Drain-Source Voltage: 600 V  Maximum Gate-Source Voltage: 30 V  &nbs...

Type Designator: FQPF10N60C  Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation: 50 WMaximum Drain-Source Voltage: 600 V| Maximum Gate-Source Voltage: 30 VMaximum Gate-Threshold Voltage: 4 V| Maximum Drain Current: 9.5 A Maximum Junct...

FQP12N60C / FQPF12N60C600V N-Channel MOSFET Features• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC) • Low Crss ( typical 21pF)• Fast switching• Improved dv/dt cap   Description These N-Channel enhancement mode power field effect tran...

13N60 FQPF13N60C MOSFET N-CH 13A 600V TO220F Type Designator: 13N60A Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation: 116 W| Maximum Drain-Source Voltage: 600 V  ...

FQPF6N60C  6N60 TO220F Type Designator: FQPF6N60C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation: 40 W|Maximum Drain-Source Voltage: 600 V Maximum Gate-Source Voltage: 30  Maximum Gate-Threshold Voltage: 4 VMaximum Drain Current: 5.5 ...

FQPF7N60C 7N60C 7N60 600V 7A MOSFET N-Channel transistor TO-220F  Type Designator: FQPF7N60\    Type of Transistor: MOSFET Type of Control Channel: N -Channel    Maximum Power Dissipation: 48 W| Maximum Drain-Source Voltage: 600 V    | Maxim...

FDPF12N60NZ 12N60NZ TO220 12A600V original FDP12N60NZ, FDPF12N60NZ MOSFET – N-Channel, UniFET II 600 V, 12 A, 650 m Description UniFET II MOSFET is onsemi’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the sm...