TO-263

AO B414 AOB414L TO-263 IC Chip AOB414 Type Designator: AOB414 Type of Transistor: MOSFET  Type of Control Channel: N -Channel  Maximum Power Dissipation: 150 W Maximum Drain-Source Voltage: 100 V  Maximum Gate-Source Voltage: 25 V Maximum Gate-Threshold Voltage: 4 V Maximum Drain Cu...

Type Designator: JCS7N70SType of Transistor: MOSFETType of Control Channel: N -Channel- Maximum Power Dissipation: 120 W|- Maximum Drain-Source Voltage: 700 V| - Maximum Gate-Source Voltage: 30 V| - Maximum Gate-Threshold Voltage: 4 V|Id|ⓘ - Maximum Drain Current: 7 A- Maximum Junctio...

DAF30A, 350V 20A TO-263 Silicon epitaxial planar type for high frequency rectification Technical parameters: Repetitive peak reverse voltage: 350VNon-repetitive peak reverse surge voltage: 350VNon-repetitive peak forward surge current: 100ARepetitive peak forward current: 150AForward current: 20A...

SMD FET 18N20GS TO-263 package--PJDZ sc N-Channel MOSFET Transistor 18N20FEATURESDrain Current I = 18A@ T =25D CStatic drain-source on-resistance:RDS(on) 0.092Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch r...

AP1506-50K5A 1506-50 AP1506 TO-263 ...

STB10NK60Z Encapsulation:TO-263,N-CHANNEL 600V-0.65ohm-10A...

 original معادل B15B65M1 (AO) TO-263   original=RJP30H2 =30f132 =30F131 ...

B416 AOB416 TO-263...

BCP53 SOT223 PNP original  ...

BD9778HFP TO-263 Isolated Voltage Input Signal...

DG301 TO-263...

FDB8447L 8447L LCD power Mosfet TO263 ...