TO-3P

Part Number: RJK5010 ( = IRFP460 ) Function: 20A, 500V, 178W, N-Channel MOSFET Package: TO-3P Type Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Feature...

The RJP2557 is a NPN silicon power transistor manufactured by Hitachi/Renesas. Features: High breakdown voltage: VCEO = 500 V Low saturation voltage: VCE(sat) = 1.2 V (max) High current gain: hFE = 200 (min) Low collector-emitter saturation voltage: VCE(sat) = 1.2 V (max) High switching speed: tF = ...

KGT25N120NDA TO-3P  original copy KGT25N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating)   Type Designator: KGT25N12...

   Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N    Maximum Power Dissipation: 231 W Maximum Collector-Emitter Voltage: 600 V    Maximum Gate-Emitter Voltage: 20 VMaximum Collector Current: 80 A @25    Collector-Emitter satur...

E13009L  TO-3P  HIGH COPY...

TT2206 TO3P Transistor...

original RJK5020DPK RJK5020  TO-3P RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching   RJK5020 RJK5020DPKTO-3P-ORIGINAL RJK5020DPK Nch Single Power Mosfet 500V 40A 118Mohm To-3P RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching    ...

Mosfet Igbt 23n50e 500 V 23a To247 FMH23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resist...

2SC3181 C3181 TO-3P...

2SC4429  C4429 TO3P NPN...

2SC5086 C5086 TO-3P...

2SC5803 C5803 TO-3P...