MOSFET TO-247

   Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N    Maximum Power Dissipation: 231 W Maximum Collector-Emitter Voltage: 600 V    Maximum Gate-Emitter Voltage: 20 VMaximum Collector Current: 80 A @25    Collector-Emitter satur...

FGH40N60SFD FGH40N60 Farichild TO-247 IGBT 600V 40A Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications wherelow conduction and switching losses are essential. Type Design...

MJL21193 + MJL21194 TO-247copy original یک جفت ...

TTA1943 TTC5200 TO-3PL NPN+PNP Amplifier Transistor 2PCS TTA1943 TTC5200 High Copy یک جفت...

E13009L  TO-3P  HIGH COPY...

TIP142 TO-247-3 Type Designator: TIP142   Material of Transistor: Si   Polarity: NPN   Maximum Collector Power Dissipation (Pc): 125 W   Maximum Collector-Base Voltage |Vcb|: 100 V   Maximum Collector-Emitter Voltage |Vce|: ...

GT60N321 igbt equivalent, silicon n-channel igbt.GT60N321 60N321 TO-247 Description This is 1000V, 60A, Fourth Generation IGBT. Features •  FRD included between emitter and collector•  Enhancement mode type•  High speed  IGBT : tf= 0.25 μs (typ.) (IC= 60 A...

Mosfet Igbt 23n50e 500 V 23a To247 FMH23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resist...

2SC5002 C5002 TO-247...

2SD1426 D1426 TO-247...

2SD1427 D1427 TO247...

2SD2331 D2331 TO-247...