FQPF10N60C 10N60 TO220F

Type Designator: FQPF10N60C  Type of Transistor: MOSFET

Type of Control Channel: N -Channel Maximum Power Dissipation: 50 WMaximum Drain-Source Voltage: 600 V| Maximum Gate-Source Voltage: 30 VMaximum Gate-Threshold Voltage: 4 V| Maximum Drain Current: 9.5 A

Maximum Junction Temperature: 150 °C Total Gate Charge: 44 nC

Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-220F