FQPF12N60C 12N60 TO-220F

FQP12N60C / FQPF12N60C
600V N-Channel MOSFET

Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC)

• Low Crss ( typical 21pF)• Fast switching• Improved dv/dt cap

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.