P6006HV SOP8

MOS FET P6006HV SOP8 

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

 Maximum Power Dissipation: 2 W

| Maximum Drain-Source Voltage: 60 V

| Maximum Gate-Source Voltage: 20 V

| Maximum Gate-Threshold Voltage: 2.5 V

| Maximum Drain Current: 4.5 A

 Maximum Junction Temperature: 150 °C

 Total Gate Charge: 12 nC

 Rise Time: 8 nS

 Output Capacitance: 80 pF

 Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP8