AOD425 D425 TO-252

AOD425
P-Channel Enhancement Mode Field Effect Transisto

The AOD425 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications. The device is
ESD protected.

Type Designator: AOD425 Type of Transistor: MOSFET  Type of Control Channel: P -Channel  Maximum Power Dissipation: 50 W

Maximum Drain-Source Voltage: 30 V Maximum Gate-Source Voltage: 25 V Maximum Gate-Threshold Voltage: 3.5 V Maximum Drain Current: 40 A

Maximum Junction Temperature: 175 °C  Total Gate Charge: 40 nC  Rise Time: 8 nS Output Capacitance: 360 pF Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: to-252