GT60N321 60N321 TO-247

GT60N321 igbt equivalent, silicon n-channel igbt.
GT60N321 60N321 TO-247

Description

This is 1000V, 60A, Fourth Generation IGBT.

Features

•  FRD included between emitter and collector
•  Enhancement mode type
•  High speed  IGBT : tf= 0.25 μs (typ.) (IC= 60 A), FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
•  Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)

Part Number: GT60N321

Function: The 4th Generation IGBT, 1000V, 60A

Pakcage : TO-3P(LH) Type

Description

High Power Switching Applications

Manufacturer: Toshiba Semiconductor