RJP30H2A TO-263 original

RJP30H2A TO-263  ORIGINAL

The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number: RJP30H2A, RJP30H2DPK-M0

Manufacturer: Renesas, Panasonic

Package: TO-263, Type

Function: N Channel IGBT, 360V, 35A

RJP30H2A is Silicon N-Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.