AO B414 AOB414 TO-263

AO B414 AOB414L TO-263 IC Chip AOB414

Type Designator: AOB414 Type of Transistor: MOSFET  Type of Control Channel: N -Channel  Maximum Power Dissipation: 150 W

Maximum Drain-Source Voltage: 100 V  Maximum Gate-Source Voltage: 25 V Maximum Gate-Threshold Voltage: 4 V Maximum Drain Current: 51 A

Maximum Junction Temperature: 175 °CRise Time: 4 nS Output Capacitance: 165 pF  Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-263

AOB414TMN-Channel SDMOS Power TransistorGeneral Description Product SummaryVDS100VThe AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)