P8010BD MOS FET TO-252

Type Designator: P8010BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 46 W
|Maximum Drain-Source Voltage: 100 V
| Maximum Gate-Source Voltage: 20 V
| Maximum Gate-Threshold Voltage: 2.3 V
| Maximum Drain Current: 15 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 18.5 nC
Rise Time: 48 nS
Output Capacitance: 68 pF
Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-252