FQP6N60 6N60 TO-220

   Type Designator: FQP6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
    Maximum Power Dissipation: 130 W
    Maximum Drain-Source Voltage: 600 V
  Maximum Gate-Source Voltage: 30 V
   | Maximum Gate-Threshold Voltage: 5 V
   | Maximum Drain Current: 6.2 A
    Maximum Junction Temperature: 150 °C
    Total Gate Charge: 20 nC
    Rise Time: 70 nS
    Output Capacitance: 95 pF
    Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220