TGAN60N60FD TGAN 60N60 TO3PN

TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications

Type Designator: TGAN60N60FD

   Type: IGBT + Anti-Parallel Diode

   Type of IGBT Channel: N

   Maximum Power Dissipation: 347 W

    Maximum Collector-Emitter Voltage: 600 V

   Maximum Gate-Emitter Voltage: 20 V

Maximum Collector Current: 120 A @25℃

   - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

    - Maximum G-E Threshold Voltag: 7.5 V

- Maximum Junction Temperature: 150 ℃

- Rise Time, typ: 125 nS

   - Output Capacitance, typ: 170 pF

- Total Gate Charge, typ: 150 nC

   Package: TO3PN