FQPF6N60C  6N60 TO220F

Type Designator: FQPF6N60C Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation: 40 W|Maximum Drain-Source Voltage: 600 V Maximum Gate-Source Voltage: 30  Maximum Gate-Threshold Voltage: 4 VMaximum Drain Current: 5.5 A

Maximum Junction Temperature: 150 °CTotal Gate Charge: 16 nC Rise Time: 45 nS Output Capacitance: 65 pFMaximum Drain-

Source On-State Resistance: 2 Ohm

Package: TO-220F