The RJP2557 is a NPN silicon power transistor manufactured by Hitachi/Renesas. Features: High breakdown voltage: VCEO = 500 V Low saturation voltage: VCE(sat) = 1.2 V (max) High current gain: hFE = 200 (min) Low collector-emitter saturation voltage: VCE(sat) = 1.2 V (max) High switching speed: tF = 30 ns (typ) Low noise Low thermal resistance TO-3P package Applications: DC-DC converters Motor control Switching regulators High-speed switching applications High-voltage switching applications (For reference only)