AP4957AGM 4957AGM SOP8

APEC AP4957GM SOP8 P-CHANNEL ENHANCEMENT MODE POWER

  Type Designator: AP4957AGM

   Type of Transistor: MOSFET

   Type of Control Channel: P -Channel

   Pdⓘ - Maximum Power Dissipation: 2 W

   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V

   |Id|ⓘ - Maximum Drain Current: 7.4 A

   Tjⓘ - Maximum Junction Temperature: 150 °C

   Qgⓘ - Total Gate Charge: 16 nC

   trⓘ - Rise Time: 6.5 nS

   Cossⓘ - Output Capacitance: 190 pF

   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

   Package: SO8