AP 4957GM AP4957GM SOP8 IC Chip

Type Designator: AP4957GM

   Type of Transistor: MOSFET

   Type of Control Channel: P -Channel

   Pdⓘ - Maximum Power Dissipation: 2 W

   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V

   |Id|ⓘ - Maximum Drain Current: 7.7 A

   Tjⓘ - Maximum Junction Temperature: 150 °C

   Qgⓘ - Total Gate Charge: 27 nC

   trⓘ - Rise Time: 11 nS

   Cossⓘ - Output Capacitance: 530 pF

   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

   Package: SO8